YG868C04R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(45V / 30A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
1
Tj=125^oC
Tj=100^oC
Tj=25^oC
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF Forward Voltage (V)
YG868C04R (30A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
10
20
30
40
50
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
24
22
20
11112222^Io3333444455556666777788889999000011112222333344445555
λ
18
360 º
16
14 ^{Square wave λ=60}
Square wave λ=120^o
12 _{Sine wave λ=180}^o
Square wave λ=180^o
10
DC
8
6
4
2
0
Per 1element
-2
-2 0 2 4 6 8 10 12 14 16 18
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
5
360 º
4
VR
11111111222222223333333344444444
11111111222222223333333344444444
DC
α
3
2
α=180^o
1
0
0
10
20
30
40
50
60
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
110
100
90
360 º
80
λ
70 _{111222333444555666777888}Io_{999000111222333444555}
60
VR=20V
DC
Square wave λ=180^o
Sine wave λ=180^o
Square wave λ=120^o
Square wave λ=60^o
50
0
5 10 15 20 25 30 35 40 45
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)