YG865C15R Datasheet, PDF (2/3 Pages) Fuji Electric – High Voltage Schottky barrier diode

(150V / 20A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V F Forward Voltage (V)
Forward Power Dissipation (max.)
16
Io
14
λ
12
360°
10 ^{Square wave λ=60°}
Square wave λ=120°
Sine wave λ=180°
8 _{Square wave λ=180°}
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
I o Average Forward Current (A)
YG865C15R (20A)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
10¹
Tj=100°C
10⁰
10^-1
Tj= 25°C
10^-2
10^-3
0 10 20 30 40 50 60 70 80 90 100110120130140150160
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
20
DC
18
360°
16
VR
14
α
12
10
α =180°
8
6
4
2
0
0
20 40 60 80 100 120 140 160
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
120
DC
110
100
90
360°
80
λ
Io
70
VR=75V
60
Sine wave λ =180°
Square wave λ =180°
Square wave λ =120°
Square wave λ =60°
50
0
5
10
15
20
25
30
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)