YG865C12R Datasheet, PDF (2/3 Pages) Fuji Electric – High Voltage Schottky barrier diode

(120V / 20A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V F Forward Voltage (A)
Forward Power Dissipation (max.)
16
Io
14
λ
12
360°
10 ^{Square wave λ =60°}
Square wave λ =120°
Sine wave λ =180°
8 _{Square wave λ =180°}
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
I o Average Output Current (A)
YG865C12R (20A)
Reverse Characteristic (typ.)
Tj=150°C
10¹
Tj=125°C
Tj=100°C
10⁰
10^-1
Tj= 25°C
10^-2
10^-3
0 10 20 30 40 50 60 70 80 90 100 110 120 130
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
10
360°
DC
8
VR
α
6
α=180°
4
2
0
0
20
40
60
80
100
120
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
DC
120
Sine wave λ =180°
Square wave λ =180°
110
Square wave λ =120°
100
90
360°
80
λ
Io
70
VR=60V
60
Square wave λ =60°
50
0
5
10
15
20
25
30
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)