YG865C06R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(60V / 20A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
YG865C06R (20A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
10^-4
0
10 20 30 40 50 60 70 80
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
16
14 ^{11112222Io3333444455556666777788889999000011112222333344445555}
λ
12
360 º
10 Square wave λ=60^o
Square wave λ=120^o
Sine wave λ=180^o
8 _{Square wave λ=180}^o
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
3
360 º
VR
11111111222222223333333344444444 11111111222222223333333344444444
DC
2
α
α=180^o
1
0
0
20
40
60
80
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
DC
110
Sine wave λ=180^o
Square wave λ=180^o
100
Square wave λ=120^o
90
360 º
80
λ
70 ^{111222333444555666777888Io999000111222333444555}
VR=30V
60
Square wave λ=60^o
0
5
10
15
20
25
30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)