YG862C10R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(100V / 10A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF Forward Voltage (V)
YG862C10R (10A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
10^-4
0
10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
6
Io
5 ^{111222333444555666777888999000111222333444555}
λ
360 º
4
Square wave λ=60^o
Square wave λ=120^o
Sine wave λ=180^o
3 Square wave λ=180^o
DC
2
1
Per 1element
0
0
1
2
3
4
5
6
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
7
360 º
6
VR
11111111222222223333333344444444 _{11111112222222333333344444445555555}
DC
5
α
4
3
α=180^o
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
DC
120
110
360 º
100
λ
90 ^{111222333444555666777888Io999000111222333444555}
VR=50V
Sine wave λ=180^o
Square wave λ=180^o
Square wave λ=120^o
Square wave λ=60^o
80
0
5
10
15
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)