YG862C06R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(60V / 10A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
YG862C06R (10A)
Reverse Characteristic (typ.)
10¹
Tj=150^oC
Tj=125^oC
10⁰
Tj=100^oC
10^-1
10^-2
Tj= 25^oC
10^-3
10^-4
0
10 20 30 40 50 60 70 80
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
6
5
11112222^Io33334444555566667777888899990000111122223333444455556666
λ
360 º
4
Square wave λ=60^o
Square wave λ=120^o
Sine wave λ=180^o
3 _{Square wave λ=180}^o
DC
2
1
Per 1element
0
0
1
2
3
4
5
6
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
5
DC
360 º
4
VR
11111111222222223333333344444444
11111111222222223333333344444444
α
3
α=180^o
2
1
0
0 10 20 30 40 50 60 70 80 90
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
155
150
145
140
135
130
125
120
360 º
115
λ
110 _{111222333444555666777888}^Io_{999000111222333444555666}
105
VR=30V
DC
Sine wave λ=180^o
Square wave λ=180^o
Square wave λ=120^o
Square wave λ=60^o
100
0
5
10
15
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)