YG862C04R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(45V / 10A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF Forward Voltage (V)
Forward Power Dissipation (max.)
6
5
11112222^Io3333444455556666777788889999000011112222333344445555
λ
360 º
4
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
3 _{Square wave λ=180°}
DC
2
1
Per 1element
0
0
1
2
3
4
5
6
Io Average Output Current (A)
YG862C04R (10A)
Reverse Characteristic (typ.)
10²
Tj=150°C
10¹
Tj=125°C
Tj=100°C
10⁰
10^-1
Tj= 25°C
10^-2
10^-3
10^-4
0
10
20
30
40
50
60
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
3
DC
360 º
VR
11111111222222223333333344444444
1111111222222233333334444444
2
α
α=180°
1
0
0
10
20
30
40
50
60
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
155
150
145
140
135
DC
130
125
360 º
λ
120
115 ^{111222333444555666777888I999o000111222333444555666}
VR=20V
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
Square wave λ=120°
110
0
5
10
15
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)