YG811S04R Datasheet, PDF (2/3 Pages) Fuji Electric – SCHOTTKY BARRIER DIODE

(40V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF Forward Voltage (V)
YG811S04R
Reverse Characteristic (typ.)
10 ²
10 ¹
10 ⁰
10 ^-1
10 ^-2
10 ^-3
0
10
20
30
VR Reverse Voltage (V)
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
40
50
Forward Power Dissipation
7.0
6.5
Io
6.0
λ
5.5
360°
5.0
4.5
4.0
Square wave
λ =60°
3.5
Square wave
λ =120°
Sine wave
λ =180°
3.0
Square wave
λ =180°
2.5
DC
2.0
1.5
1.0
0.5
Per 1element
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Io Average Forward Current (A)
Reverse Power Dissipation
12
360°
DC
VR
10
α
8
6
α =180°
4
2
0
0
5
10
15
20
25
30
35
40
45
50
VR Reverse Voltage (V)
Current Derating (Io-Tc)
160
150
140
130
120
110
100
90
360°
λ
Io
VR=30V
DC
Sine wave
λ =180°
Square wave
λ =180°
Square wave
λ =120°
Square wave
λ =60°
80
0
1
2
3
4
5
6
7
8
Io Average Output Current (A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (typ.)
1000
100
1
10
100
VR Reverse Voltage (V)