YG803C04R Datasheet, PDF (2/3 Pages) Fuji Electric – Schottky-Barrier Diode

(40V / 15A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VF Forward Voltage (V)
Forward Power Dissipation (max.)
8.0
7.5
Io
7.0
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6.5
λ
6.0
360 º
5.5
5.0
4.5
Square wave λ=60°C
4.0
Square wave λ=120°C
3.5
Sine wave λ=180°C
Square wave λ=180°C
3.0
DC
2.5
2.0
1.5
1.0
0.5
Per 1element
0.0
0
1
2
3
4
5
6
7
IO Average Forward Current (A)
YG803C04R (15A)
Reverse Characteristic (typ.)
10²
Tj=150°C
10¹
Tj=125°C
Tj=100°C
10⁰
10^-1
Tj=25°C
10^-2
10^-3
0
10
20
30
40
50
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
10
360 º
8
VR
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11111111222222223333333344444444
DC
α
6
α=180°
4
2
0
0 5 10 15 20 25 30 35 40 45
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
DC
130
120
Sine wave λ=180°C
110
Square wave λ=180°C
100
90
360 º
80
λ
70
60
11112222333344445555666677778888^Io9999000011112222333344445555
VR=20V
50
0
2
4
6
8
Square wave λ=120°C
Square wave λ=60°C
10 12 14 16
λ ^{IO Average Output Current (A)}
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (typ.)
1000
100
1
10
100
VR Reverse Voltage (V)