YA868C15R Datasheet, PDF (2/3 Pages) Fuji Electric – High Voltage Schottky barrier diode

(150V / 30A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V F Forward Voltage (V)
Forward Power Dissipation (max.)
22
Io
20
λ
18
360°
16
14 ^{Square wave λ =60°}
Square wave λ =120°
12 ^{Sine wave λ =180°}
Square wave λ =180°
10
DC
8
6
4
2
Per 1element
0
0
2
4
6
8 10 12 14 16 18
I o Average Forward Current (A)
YA868C15R (30A)
Reverse Characteristic (typ.)
Tj=150°C
10¹
Tj=125°C
Tj=100°C
10⁰
10^-1
Tj= 25°C
10^-2
10^-3
0 10 20 30 40 50 60 70 80 90 100110120130140150160
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
12
360°
DC
10
VR
α
8
6
α =180°
4
2
0
0 20 40 60 80 100 120 140 160
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
DC
120
Sine wave λ =180°
Square wave λ =180°
360°
110
λ
Io
Square wave λ =120°
VR=75V
Square wave λ =60°
100
0
5 10 15 20 25 30 35 40 45
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)