YA865C04R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(45V / 20A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
YA865C04R (20A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
10^-4
0
10
20
30
40
50
60
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
16
Io
14 ^{111222333444555666777888999000111222333444555}
λ
12
360 º
10 _{Square wave λ=60}^o
Square wave λ=120^o
Sine wave λ=180^o
8 _{Square wave λ=180}^o
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
Io Average Output Current (A)
Reverse Power Dissipation (max.)
4
360 º
3
VR ^{1111111222222233333334444444 1111111222222233333334444444}
DC
α
2
α=180^o
1
0
0
20
40
60
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
360 º
DC
Square wave λ=180
Sine wave λ=180^o
Square wave λ=120^o
λ
110 _{111222333444555666777}^I₈₈₈^o_{999000111222333444555}
VR=20V
Square wave λ=60^o
100
0
5
10
15
20
25
30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)