YA862C12R Datasheet, PDF (2/3 Pages) Fuji Electric – High Voltage Schottky barrier diode

(120V / 10A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V F Forward Voltage (V)
Forward Power Dissipation (max.)
8
Io
λ
6
360°
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
4 _{Square wave λ=180°}
DC
2
Per 1element
0
0
2
4
6
I o Average Forward Current (A)
YA862C12R (10A)
Reverse Characteristic (typ.)
10¹
Tj=150°C
Tj=125°C
10⁰
Tj=100°C
10^-1
10^-2
Tj= 25°C
10^-3
10^-4
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
4
360°
DC
VR
α
2
α=180°
0
0
20
40
60
80
100 120 140
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
DC
140
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
130
Square wave λ=60°
120
360°
λ
Io
110
VR=60V
100
0
5
10
15
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)