SD833-09 Datasheet, PDF (2/3 Pages) Fuji Electric – Schottky barrier diode

(90V / 3A )
Characteristics
Forward Characteristic (typ.)
10
1
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
0.1
0.01
0.0
0.5
1.0
1.5
VF Forward Voltage (V)
Forward Power Dissipation
4.5
Io
4.0
3.5
λ
360°
3.0
Square wave λ=60°
2.5
Square wave λ=120°
Sine wave λ=180°
2.0
Square wave λ=180°
DC
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Io Average Forward Current (A)
SD833-09 (3A)
Reverse Characteristic (typ.)
10²
Tj=150°C
Tj=125°C
10¹
Tj=100°C
10⁰
10^-1
Tj= 25°C
10^-2
10^-3
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
5.0
4.5
360°
DC
4.0
VR
3.5
α
3.0
2.5
α=180°
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60 70 80 90 100
VR Reverse Voltage (V)
Current Derating (Io-Tl)
5.0
360°
4.5
λ
Io
4.0
VR=50V
3.5
VR=50V
3.0
2.5 ^{Sine wave λ=180°}
DC
Square wave λ=180°
2.0 ^{Square wave λ=120°}
Square wave λ=60°
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120 140 160
Tl Lead Temperature (°C)
Junction Capacitance Characteristic(typ.)
1000
100
10
1
10
100
VR Reverse Voltage (V)