FMV19N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV19N60E
Allowable Power Dissipation
PD=f(Tc)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
50
40
30
20
10
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
10²
10¹
10⁰
t=
1µs
10µs
100µs
1ms
10^-1
10^-2
Power loss w aveform :
Square waveform
P_D
tt
10^-3
10⁰
10¹
10²
VDS [V]
D.C.
10³
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.60
VGS=4.5V
0.55
5.0V
5.5V
0.50
6.0V
0.45
10V
0.40
0.35
0.30
0.25
0
5
10 15 20 25 30 35 40
ID [A]
2