FMV16N60ES Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV16N60ES
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
40
35
10V
30
8.0V
25
20
7.5V
15
7.0V
10
6.5V
5
VGS=6.0V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
10^{2 ID=f(VDS):Duty=0(Single pulse),Tc=25 °c}
10¹
t=
1µs
10µs
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10^-1
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0
2
4
6
8
10
12
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.8
VGS=6.0V
6.5V 7V
0.7
8V
10V
20V
0.6
0.5
0.4
0.3
0
5
10 15 20 25 30 35 40
ID [A]
2