English
Language : 

FMV12N50E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
◁
FMV12N50E
Allowable Power Dissipation
PD=f(Tc)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
20
18
16
14
125
150
20V
10V
6.0V
5.0V
12
10
8
6
4.5V
4
2
VGS=4.0V
0
0
2
4
6
8
10
12
14
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.01
0.01
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
t=
1µs
10µs
100µs
100
1ms
10-1
Power loss waveform :
Square w aveform
10-2
10-1
PD
t
100
101
VDS [V]
DC
102
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
101
100
10-1
10-2
10-3
10-4
2
3
4
5
6
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.9
VGS=4.0V 4.5V
5V
0.8
0.7
6V
0.6
10V
20V
0.5
0.4
0.3
0
5
10
15
20
ID [A]
2
 ▷