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FMV11N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV11N60E
Allowable Power Dissipation
PD=f(Tc)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
20
15
10
5
0
0
5
10
15
20
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.01
0.01
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
100
t=
1µs
10µs
100µs
1ms
10-1
Pow er loss w aveform :
Square w aveform
PD
t
10-2
10-1
100
101
102
VDS [V]
DC
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
101
100
10-1
10-2
10-3
10-4
2
3
4
5
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.3
VGS=4.0V
4.5V
5V
1.2
1.1
1.0
6
6V
10V
20V
0.9
0.8
0.7
0.6
0.5
0
5
10
15
20
ID [A]
2
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