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FMR11N90E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMR11N90E
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
200
150
100
50
0
0
25
50
75
100
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25 °C
20
125
150
10V
7.0V
6.5V
15
6.0V
10
5
VGS=5.5V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°c
102
101
100
t=
1μs
10μs
100μs
1ms
10-1
Power loss waveform :
Square waveform
PD
t
10-2
10-1
100
101
102
103
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80μs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
1.8
VGS=5.5V
6V
1.6
1.4
1.2
6.5V 7V
10V
20V
1.0
0.8
0.6
0
2
5
10
15
20
ID [A]
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