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FMP03N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMP03N60E
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
10
8
10V
6.0V
6
5.0V
4
4.5V
2
VGS=4.0V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
100
t=
1µs
10µs
100µs
1ms
10-1
Power loss waveform :
Square waveform
10-2
PD
DC
t
10-3
10-1
100
101
102
103
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
101
100
10-1
10-2
10-3
10-4
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
4.0
VGS=4.0V 4.5V
5V
3.5
6V
10V
3.0
2.5
2.0
0.01
0.01
0.1
1
10
100
ID [A]
1.5
0
2
4
6
8
10
ID [A]
2
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