FML16N50ES Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FML16N50ES
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [˚C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
40
10V
30
8.0V
FUJI POWER MOSFET
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Safe Operating Area
I_D=f(V_DS):Duty=0(Singlepulse), Tc=25˚c
10²
10¹
t=
1µs
10µs
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
100
10
20
7.5V
7.0V
10
6.5V
VGS=6.0V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C
100
1
0.1
0
2
4
6
8
10
12
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
0.8
VGS=6.5V
0.7
7V
10
0.6
8V
10V
20V
0.5
1
0.4
0.3
0.1
0.1
1
10
ID [A]
0.2
100
0
2
10
20
30
40
ID [A]