FMI06N60ES Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMI06N60ES
Allowable Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
15
10V
8.0V
7.0V
10
6.5V
5
VGS=6.0V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
I_D=f(V_DS):Duty=0(Single pulse),Tc=25 °c
10¹
10⁰
10^-1
t=
1?s
10?s
100?s
1ms
10^-2
Power loss waveform :
Square waveform
P_D
t
10^-3
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 Ÿs pulse test,VDS=25V,Tch=25 ›C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.0
VGS=6.0V
6.5V
1.8
1.6
7V _{8V 10V}
20V
1.4
1.2
1.0
0.8
0
2
4
6
8
10
12
14
ID [A]
2