FMH07N90E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMH07N90E
Allowable Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test, Tch=25°C
12
10
20V _10V
7.0V
8
6.0V
6
4
VGS=5.5V
2
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25 °C
100
10
1
FUJI POWER MOSFET
http://www.fujisemi.com
Safe Operating Area
I =f(V ):Duty=0(Single pulse), Tc=25°c
10^{2 D}
DS
t=
1µs
10¹
10µs
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10^-1
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25 °C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25 °C
3.2
VGS=5.5V
6V
2.8
2.4
7V
10V
20V
2.0
1.6
0.1
0.1
1
10
ID [A]
1.2
100
0
2
4
6
8
10
ID [A]
2