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FMC10N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFETFeatures
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FMC10N60E
Allowable Power Dissipation
PD=f(Tc)
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
20
20V
10V
6.0V
5.0V
15
10
4.5V
5
VGS=4.0V
0
0
5
10
15
20
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.01
0.01
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
100
t=
1µs
10µs
100µs
1ms
10-1
Power loss waveform :
Square waveform
PD
t
10-2
10-1
100
101
102
VDS [V]
DC
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
101
100
10-1
10-2
10-3
10-4
2
3
4
5
6
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.3
VGS=4.0V 4.5V
5V
1.2
1.1
6V
10V
20V
1.0
0.9
0.8
0.7
0.6
0.5
0
5
10
15
20
ID [A]
2
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