FGW40N120HD Datasheet, PDF (2/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 1200V / 40A

FGW40N120HD
FWD Characteristics
Description
Forward Voltage Drop
Diode Reverse Recovery Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal resistance characteristics
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Symbol
VF
trr1
trr2
Qrr
trr2
Qrr
Symbols
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
Conditions
IF=30A
VCC=30V,IF = 3.0A
-di/dt=200A/μs
VCC=600V
IF=30A
-diF/dt=200A/µs
Tj=25°C
VCC=600V
IF=30A
-diF/dt=200A/µs
Tj=175°C
Conditions
-
-
-
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Tj=25°C
Tj=175°C
Characteristics
min. typ. max.
Unit
-
2.2
2.8
V
-
1.8
-
V
-
49
63
ns
0.44
-
μs
-
1.35
-
μC
-
0.70
-
μs
-
6.00
-
μC
Characteristics
min. typ. max.
-
-
50
-
-
0.439
-
-
0.781
Units
°C/W
2