FGW35N60H Datasheet, PDF (2/6 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 35A

FGW35N60H
Characteristics (Representative)
Graph.1
DC Collector Current vs TC
VGE≥+15V, Tj≤175^ºC
100
80
Tj≤175℃
60
40
20
0
25
50
75
100
125
150
175
Case Temperature [°C]
Graph.3
Typical Output Characteristics (VCE-IC)
Tj=25^ºC
60
V_GE=20V
12V
50
15V
10V
8V
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.5
Typical Transfer Characteristics
VGE=+15V
60
50
40
30
Tj=175℃
Tj=25℃
20
10
0
0
2
4
6
8
10
VGE [V]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.2
Collector Current vs. switching frequency
VGE=+15V, TC≤175^ºC, VCC=400V, D=0.5,
RG=10Ω, TC=100^ºC
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
Collector-Emitter corrent : ICE [A]
Graph.4
Typical Output Characteristics (VCE-IC)
Tj=175^ºC
60
VGE=20V
50
15V
12V
10V
40
8V
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. Tj
IC=35mA, VCE=20V
8
7
max.
6
5
typ.
4
min.
3
2
1
0
-50 -25 0
25 50 75 100 125 150 175
Tj [℃]
2