ERB84-009_01 Datasheet, PDF (2/3 Pages) Fuji Electric – SCHOTTKY BARRIER DIODE

(90V / 2A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF Forward Voltage (V)
2.4
2.2
Io
Forward Power Dissipation
2.0
λ
1.8
360°
1.6
Square wave λ=60°C
1.4
Square wave λ=120°C
Sine wave λ=180°C
1.2
Square wave λ=180°C
1.0
DC
0.8
0.6
0.4
0.2
Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Io Average Forward Current (A)
Current Derating (Io-Ta)
2.6
2.4
L=5mm
2.2
Cu area:1tx20x20mm
2.0
360°
λ
Io
VR=50V
1.8
DC
1.6
1.4
1.2
1.0
Sine wave λ=180°C
0.8
Square wave λ=180°C
0.6
Square wave λ=120°C
0.4
Square wave λ=60°C
0.2
0.0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature (°C)
ERB84-009 (2A)
Reverse Characteristic (typ.)
10²
Tj=150°C
10¹
Tj=125 °C
10⁰
Tj=100 °C
10^-1
10^-2
Tj= 25°C
10^-3
10^-4
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
5.0
DC
4.5
360°
4.0
VR
3.5
α
3.0
2.5
α =180°C
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60 70 80 90 100
VR Reverse Voltage (V)
Current Derating (Io-Ta)
2.6
2.4
L=10mm
2.2
Land an area:5x5mm
2.0
DC
1.8
1.6
1.4
1.2
360°
λ
Io
VR=50V
Sine wave λ=180°C
Square wave λ=180°C
Square wave λ=120°C
Square wave λ=60°C
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature (°C)