ERB81-004_01 Datasheet, PDF (2/3 Pages) Fuji Electric – SCHOTTKY BARRIER DIODE

(40V / 2.0A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
Forward Power Dissipation
2.4
2.2
Io
2.0
λ
1.8
360°
1.6
1.4
Square wave λ=60^o
Square wave λ=120^o
1.2
Sine wave λ=180^o
1.0
Square wave λ=180^o
DC
0.8
0.6
0.4
0.2
Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Io Average Forward Current (A)
ERB81-004 (2.0A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
10⁰
Tj=100^oC
10^-1
10^-2
10^-3
0
Tj=25^oC
10
20
30
40
50
VR Reverse Voltage (V)
Reverse Power Dissipation
2.0
DC
360°
1.8
VR
1.6
1.4
α
1.2
1.0
α =180^o
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
VR Reverse Voltage (V)
Current Derating (Io-Ta)
2.4
2.2
VR=30V
2.0
DC
Sine wave λ=180^o
1.8
Square wave λ=180^o
1.6
Square wave λ=120^o
Square wave λ=60^o
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature ( ^oC)
Current Derating (Io-Tl)
3.0
2.8
2.6
2.4
2.2
2.0
DC
1.8
1.6
Sine wave λ=180^o
1.4 Square wave λ=180^o
1.2 ^{Square wave λ=120o}
Square wave λ=60^o
1.0
0.8
0.6
0.4
0.2
0.0
90
100
110
120
130
140
150
160
Tl Lead Temperature ( ^oC)