CB803-03 Datasheet, PDF (2/3 Pages) Fuji Electric – SCHOTTKY BARRIER DIODE

(30V / 2.0A )
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation
1.8
1.7
1.6
Io
1.5
1.4
λ
1.3
360°
1.2
1.1
1.0
Square wave λ=60°
0.9 ^{Square wave λ=120°}
Sine wave λ=180°
0.8
Square wave λ=180°
0.7
DC
0.6
0.5
0.4
0.3
0.2
0.1
Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Io Average Forward Current (A)
Current Derating (Io-Tl)
3.0
2.5
2.0
1.5
DC
Sine wave λ=180°
1.0
Square wave λ=180°
Square wave λ=120°
0.5
Square wave λ=60°
0.0
25
50
75
100
125
150
Tl Lead Temperature (°C)
CB803-03 (2.0A)
Reverse Characteristic (typ.)
10²
Tj=150°C
10¹
Tj=125°C
Tj=100°C
10⁰
10^-1
Tj=25°C
10^-2
10^-3
0
5
10
15
20
25
30
35
VR Reverse Voltage (V)
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Reverse Power Dissipation
DC
360°
VR
α
Square wave λ=180°
5
10
15
20
25
30
35
40
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
100
10
10
100
VR Reverse Voltage (V)