2SK3923-01_05 Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3923-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
35
30
20V
10V
25
8V
20
15
7V
10
6.5V
5
VGS=6V
0
0
2
4
6
8
10 12 14 16
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
100
10
10
1
1
0.1
0.01
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
0.1
0.1
1
10
100
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
1.0
0.9
VGS=6.5V
7.0V
0.8
7.5V
0.7
8V
0.6
10V
20V
0.5
0.4
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
35
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
0.8
0.7
0.6
0.5
0.4
max.
0.3
typ.
0.2
0.1
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2