2SK3692-01 Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3692-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
20V
10V
30
25
8V
20
15
7.5V
10
7.0V
5
VGS=6.5V
0
0
4
8
12
16
20
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
1
0.1
1
10
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.9
0.8
VGS=6.5V _7.0V
7.5V
0.7
8V
0.6
0.5
10V
20V
0.4
0.3
0.2
0
5
10
15
20
25
30
35
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
1.0
0.9
0.8
0.7
0.6
0.5
max.
0.4
typ.
0.3
0.2
0.1
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
2