2SK3686-01_05 Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3686-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
0
25
50
75
100
125
150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25 °C
50
40
30
20V
10V
8V
7V
20
6.5V
10
VGS=6.0V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transfer Characteristic
Typical Transconductance
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25 °C
100
100
10
10
1
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
0.1
0.1
1
10
100
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25 °C
1.0
VGS=6V
6.5V
0.9
0.8
7V
0.7
8V
10V
0.6
20V
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20
30
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
max.
0.6
0.5
0.4
typ.
0.3
0.2
0.1
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
2