2SK3612-01L Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3612-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80μs Pulse test,Tch=25°C
30
20V _10V
25
8V
7.5V
7.0V
20
15
6.5V
10
6.0V
5
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=48V
350 ^AS
I =6A
AS
300
250
I =9A
AS
200
150 I =14A
AS
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0.6
VGS=
5.5V 6.0V
6.5V
0.5
7.0V
0.4
7.5V
8V
10V
20V
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
ID [A]
2