2SK3596-01L Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3596-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
200
175
150
125
100
75
50
25
0
0
25
50
75
100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80
7.5V
60
7.0V
40
6.5V
6.0V
20
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
500
400
300
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.20
0.15
VGS= _6.0V
5.5V
6.5V
7.0V
7.5V
8V
0.10
10V
20V
0.05
0.00
0
20
40
60
80
100
120
ID [A]
2