2SK3533-01 Datasheet, PDF (2/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3533-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
10
10V
20V _8.0V
7.0V
6.5V
8
6.0V
6
4
2
VGS=5.5V
0
0
5
10
15
20
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
1
0.1
1
10
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.1
VGS=5.5V
6.0V
6.5V
7.0V
2.0
8.0V
10V
1.9
20V
1.8
1.7
1.6
1.5
1.4
0
2
4
6
8
10
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3.5A,VGS=10V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
max.
2.0
typ.
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
2