2SK3469 Datasheet, PDF (2/4 Pages) Fuji Electric – N CHANNEL SILICON POWER MOSFET

2SK3469-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
28
20V
10V
8V
26
24
22
7.5V
20
18
16
14
12
7.0V
10
8
6
VGS=6.5V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
ID [A]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A
300
250
200
150
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
1.4
VGS=6.5V
7.0V
1.2
7.5V
1.0
10V
8V _20V
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
ID [A]
2