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2SK2469-01MR Datasheet, PDF (2/2 Pages) Fuji Electric – N-channel MOS-FET | |||
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N-channel MOS-FET
300V 1⦠5A 30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2469-01MR
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
â
1
â
2
â
3
â VDS [V]
Typical Drain-Source On-State-Resistance
RDS(on)=f(ID); 80µs pulse test; TC=25°C
â Tch [°C]
Typical Transconductance
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
â
4
â
5
â VGS [V]
Gate Threshold Voltage
VGS(th)=f(Tch); ID=1mA; VDS=VGS
â
6
â ID [A]
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
â
7
â ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg); ID=5A
â Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test
â
8
ââ
9
â VDS [V]
Power Dissipation
PD=f(Tc)
â
10
â Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
â
â
12
â VSD [V]
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
â Tc [°C]
â VDS [V]
t [s] â
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
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