2MBI600U2E-060 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT Module

2MBI600U2E-060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1400
1200
VGE=20V 15V 12V
1000
10V
800
600
400
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1400
1200
Tj=25°C Tj=125°C
1000
800
600
400
200
0
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
100.0
Cies
10.0
Cres
Coes
1.0
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
1400
1200
VGE=20V 15V 12V
1000
10V
800
600
400
8V
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=1200A
2
Ic=600A
Ic=300A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=600A, Tj= 25°C
VGE
VCE
0
500
1000 1500 2000 2500
Gate charge : Qg [ nC ]