1MBI400V-120-50 Datasheet, PDF (2/7 Pages) Fuji Electric – IGBT MODULE (V series) 1200V / 400A / 1 in one package

1MBI400V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 400mA
Tj=25°C
Tj=125°C
VGE = 15V
IC = 400A
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 400A
VGE = ±15V, RG = 1.8Ω
Tj=150°C, Ls=35nH
VGE = 0V
IF = 400A
IF = 400A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (*4)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
-
-
2.0
-
-
800
6.0
6.5
7.0
-
1.95 2.40
-
2.25
-
2.30
-
1.75 2.15
-
2.05
-
2.10
-
36
-
-
0.60
-
-
0.20
-
-
0.08
-
-
1.00
-
-
0.14
-
-
1.85 2.30
-
2.00
-
1.95
-
1.70 2.15
-
1.85
-
1.80
-
0.20
-
Units
mA
nA
V
V
nF
µs
V
µs
Characteristics
min. typ. max.
-
-
0.062
-
-
0.110
-
0.0125
-
Units
°C/W
2