1MBI400S-120 Datasheet, PDF (2/4 Pages) Fuji Electric – 1200V / 400A 1 in one-package IGBT Module

1MBI400S-120
Characteristics
1000
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
VGE= 20V 15V 12V
800
600
10V
400
200
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
8V
5
1000
800
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Tj= 25°C Tj= 125°C
600
400
200
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
10000
5000
Coes
Cres
1000
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
IGBT Module
1000
800
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
VGE= 20V 15V 12V
600
10V
400
200
0
0
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 800A
Ic= 400A
Ic=200A
10
15
20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=400A, Tj= 25°C
25
25
800
20
600
15
400
10
200
5
0
0
0
1000
2000
3000
4000
Gate charge : Qg [ nC ]