1MBI400NA-120 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE(N series)

1000
800
Collector current vs. Collector-Emitter voltage
T_j=25°C
V_GE=20V, 15V, 12V, 10V
600
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : V_CE [V]
Collector-Emitter vs. Gate-Emitter voltage
T_j=25°C
10
8
6
4
I_C=
800A
2
400A
200A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
V_CC=600V, R_G=1.8Ω , V_GE±15V, T_j=25°C
t_off
t_on
t_f
t_r
1000
800
Collector current vs. Collector-Emitter voltage
T_j=125°C
V_GE=20V, 15V, 12V, 10V
600
400
8V
200
0
0
1
2
3
4
5
Collector-Emitter voltage : V_CE [V]
Collector-Emitter vs. Gate-Emitter voltage
T_j=125°C
10
8
6
4
I_C=
800A
2
400A
200A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
V_CC=600V, R_G=1.8Ω , V_GE=±15V, T_j=125°C
t_off
t_on
t_f
t_r
100
10
0
200
400
600
800
Collector current : I_C [A]
10
0
200
400
600
800
Collector current : I_C [A]