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1MBI300N-120 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE(N series)
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Collector current vs. Collector-Emitter voltage
Tj=25°C
VGE= 20V, 15V, 12V, 10V
600
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
IC=
4
600A
300A
2
150A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
VCC=600V, RG=2.7Ω , VGE=±15V, Tj=25°C
1000
toff
ton
tf
tr
100
Collector current vs. Collector-Emitter voltage
Tj=125°C
VGE= 20V, 15V, 12V, 10V
600
400
8V
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
IC=
4
600A
300A
2
150A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=600V, RG=2.7Ω , VGE±15V, Tj=125°C
toff
ton
tf
tr
100
10
10
0
200
400
600
0
Collector current : IC [A]
200
400
600
Collector current : IC [A]
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