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1MBI200NK-060 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE ( N series )
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Collector current vs. Collector-Emitter voltage
Tj=25°C
500
VGE=20V,15V,12V
400
300
10V
200
100
0
0
8V
1
2
3
4
5
6
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4
IC=
400A
2
200A
100A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=9.1Ω, VGE=±15V, Tj=25°C
ton
toff
tr
tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
500
VGE=20V,15V,12V
400
300
10V
200
100
0
0
8V
1
2
3
4
5
6
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
IC=
400A
200A
2
100A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=9.1Ω, VGE=±15V, Tj=125°C
toff
ton
tr
tf
100
10
0
100
200
300
Collector current : IC [A]
10
0
100
200
300
Collector current : IC [A]
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