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1MBI200NA-120 Datasheet, PDF (2/4 Pages) Fuji Electric – IGBT MODULE ( N series )
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Collector current vs. Collector-Emitter voltage
Tj=25°C
500
VGE= 20V, 15V, 12V, 10V
400
300
200
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4
IC=
400A
200A
2
100A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=600V, RG=4.7Ω , VGE=±15V, Tj=25°C
toff
ton
tf
tr
100
Collector current vs. Collector-Emitter voltage
Tj=125°C
500
VGE= 20V, 15V, 12V, 10V,
400
300
200
8V
100
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
IC=
400A
200A
2
100A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=600V, RG=4.7Ω , VGE=±15V, Tj=125°C
toff
ton
tf
tr
100
10
0
100
200
300
400
Collector current : IC [A]
10
0
100
200
300
400
Collector current : IC [A]
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