1MBH08D-120_09 Datasheet, PDF (2/4 Pages) Fuji Electric – 1200V / 8A Molded Package

1MBH08D-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj=25°C
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current
VCC=600V, RG=20Ω, VGE=±15V, Tj=25°C
Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current
VCC=600V, RG=20Ω, VGE=±15V, Tj=125°C
Collector current : IC (A)
Collector current : IC (A)