7MBR20UF060 Datasheet, PDF (14/16 Pages) Fuji Electric – Power Integrated Module

[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25^oC (typ.) / chip
40
30
VGE=20V 15V 13V
11V
20
9V
10
[Brake]
Collector current vs. Collector-Emitter voltage
Tj= 125^oC (typ.) / chip
40
VGE=20V 15V
30
13V
11V
20
9V
10
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
40
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25^oC (typ.) / chip
10
Tj=25 ^oC
Tj=125 ^oC
8
30
20
10
0
0
Not ^{recommend 1}
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[Brake]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25^oC
6
4
for²
new
design.
0
8
10
12
14
16
18
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=8A, Tj= 25^oC
Ic=30A
15A
7.5A
20
22
10 ⁴
500
25
400
20
1000
Cies
300
15
100
Coes
Cres
10
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
200
10
100
5
0
0
0
10
20
30
40
50
60
70
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00819
a
14 / 16
H04-004-03a