7MBR15UF060 Datasheet, PDF (14/16 Pages) Fuji Electric – Power Integrated Module

[ Brake]
Collector current vs. Collector-Emitter voltage
Tj= 25^oC(typ.) / chip
25
VGE=20V 15V
13V
20
15
11V
10
5
9V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
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Collector current vs. Collector-Emitter voltage
Tj= 125^oC(typ.) / chip
25
VGE=20V
20
15V
15
13V
11V
10
9V
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
25
20
15
10
5
0
0
1000
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Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
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Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25^oC (typ.) / chip
10
Tj=25 ^oC
8
Tj=125 ^oC
Not ^{recommend 1}
2
3
4
5
6
Collector - Emitter voltage : VCE [ V ]
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Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25^oC
for ^{new design. 6}
4
Ic=20A
2
10A
5A
0
5
10
15
20
Gate - Emitter voltage : VGE [ V ]
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Dynamic Gate charge (typ.)
Vcc=300V, Ic=4A, Tj= 25^oC
25
500
25
400
20
Cies
300
15
100
Coes
10
0
Cres
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
200
10
100
5
0
0
0
5
10
15
20
25
30
35
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00814 _14/16
H04-004-03a