6MBI225U4-170 Datasheet, PDF (11/14 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
10000
1000
100
ton
1000 ^toff
ton
toff
tr
tr
tf
tf
100
10
0
100
200
300
400
Collector current : Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
10000
1000
ton
toff
tr
100
tf
10
0.1
1.0
10.0
Gate resistance : RG [Ω]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
250
Eon
200
150
Eoff
100
50
Err
0
0.1
1.0
10.0
Gate resistance : RG [Ω]
100.0
10
0
100
200
300
400
Collector current : Ic [A]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
125
100
Eoff(125°C)
75
Err(125°C)
Eon(125°C)
Eoff(25°C)
Err(25°C)
50
Eon(25°C)
25
0
0 50 100 150 200 250 300 350 400 450
Collector current : Ic [A]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
Stray inductance <= 100nH
600
500
400
300
200
100
0
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
MS5F6306
11
a
14
H04-004-03a