2MBI100U4H-170 Datasheet, PDF (11/13 Pages) Fuji Electric – IGBT MODULE

Forward current vs. Forward on voltage (typ.)
chip
250
200
Tj=25°C
Tj=125°C
150
100
50
0
0
1
2
3
4
Forward on voltage : VF [V]
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=4.7Ω
1000
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
100
10
0
50
100
150
200
Forward current : IF [A]
1.000
0.100
Transient thermal resistance　(max.)
FW D
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [sec]
1.000
MS5F6143
11
a
b
13
H04-004-03a