2MBI200TA-060 Datasheet, PDF (10/14 Pages) Fuji Electric – IGBT Module

[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
600
500
400
VGE= 20V ^{15V 12V}
10V
300
200
100
0
0
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
600
Tj= 25C Tj= 125C
400
200
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
50000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
10000
5000
Cies
1000
Coes
Cres
500
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
600
500
400
VGE= 20V ^15V _12V
10V
300
200
100
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
12
10
8
6
4
2
Ic=400A
Ic=200A
Ic=100A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=200A, Tj= 25C
500
25
400
20
300
15
200
10
100
5
0
0
0
200
400
600
800
1000 1200 1400
Gate charge : Qg [ nC ]
MS5F 5291
10
a
14
H04-004-03