2MBI150U4A-120 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=125^oC
10000
1000
100
toff
ton
tr
tf
10
0
50 100 150 200 250 300
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj=25^oC
10000
1000
100
ton
toff
tr
tf
10
1
10
100
Gate resistance : RG [ Ω ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj=125^oC
40
Eon
30
20
Eoff
1000
100
ton
toff
tr
tf
10
0
50 100 150 200 250 300
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.2Ω
25
20
Eoff(125^oC)
Eon(125^oC)
15
Err(125^oC)
Eoff(25^oC)
10
Eon(25^oC)
Err(25^oC)
5
0
0
50
100 150 200 250 300
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 2.2Ω, Tj <= 125^oC
400
300
200
10
0
1
Err
10
100
Gate resistance : RG [ Ω ]
1000
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6031
10
13
H04-004-03a